RF ION SOURCES

The Oxford Applied Research RF ion sources are employed in applications
where ion-beam etching, sputter deposition or assisted deposition are
required with minimal contamination. The inductively-coupled discharge
requires no hot cathode and, with the exception of the extraction grids,
takes place entirely within an ultra-pure ceramic discharge zone. This
configuration lends itself to operation with reactive gases, such as oxygen,
hydrogen or nitrogen without the accelerated degradation of the discharge
zone as observed in filament-driven ion sources.

As there are now many manufacturers of stand alone power supplies we now offer these high performance sources with RF power supplies but without DC power supplies.

Beam profile

The sources can be equipped with a variety of grids, to tailor the beam profile to a particular application. For example, convex grids can be used for irradiation of large areas with high uniformity. Concave grids can be employed to focus the beam for applications where very high current-density is required, such as sputter deposition.

Beam Neutralisation

Ion impingement on insulating surfaces leads to a rapid build-up of charge, ultimately retarding the ion beam. This is overcome by injecting electrons into the ion beam to neutralise it.  We offer plasma bridge neutraliser and filament-based electron injection sources. Both can be supplied for prolonged use with reactive gases.

MODELS:

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